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31st January 2019

First 1TB embedded Universal Flash Storage for smartphones

Powered by fifth-generation V-NAND, Samsung's new Universal Flash Storage offers 20x more storage than a 64GB internal memory and 10x the speed of a typical microSD card.

 

first 1tb embedded universal flash storage

 

Samsung has announced that it has begun mass producing the first one terabyte (TB) embedded Universal Flash Storage (eUFS) 2.1, for use in next-generation mobile applications. Just four years after introducing the first UFS solution, the 128 gigabyte (GB) eUFS, Samsung has passed the much-anticipated terabyte threshold in smartphone internal storage. Smartphone enthusiasts will soon be able to enjoy capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards.

"The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market."

Within the same package size (11.5mm x 13.0mm), the new 1TB eUFS is double the capacity of the previous 512GB version, combining 16 stacked layers of Samsung’s most advanced V-NAND flash memory. It can store 260 10-minute videos in 4K UHD (3840×2160) format, whereas the 64GB eUFS widely used in current high-end smartphones can store 13 videos of the same size.

The 1TB eUFS also provides exceptional speed. At up to 1,000 megabytes per second (MB/s), it has nearly twice the sequential read speed of a typical 2.5" SATA solid state drive (SSD). This means that a 5GB full HD video can be offloaded in as little as five seconds, 10 times the speed of a typical microSD card. Furthermore, the random read speed has increased by up to 38% over the 512GB version, clocking in at 58,000 IOPS. Random writes are 500 times faster than a high-performance microSD card (100 IOPS), coming in at 50,000 IOPS. The random speeds allow for high-speed continuous shooting at 960 frames per second and will enable smartphone users to take full advantage of the multi-camera capabilities in flagship models.

Samsung plans to expand the production of its fifth-generation V-NAND at the massive Pyeongtaek plant in South Korea throughout the first half of 2019 to fully address the anticipated strong demand for the 1TB eUFS from mobile device manufacturers around the world.

 

first 1tb embedded universal flash storage

 

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